Crystalline silicon solar cells with segmented selective emitter by ultraviolet laser doping

A solar cell design with a UV laser doped segmented selective emitter is reported. Several different laser settings are explored to determine the optimum power for this process and it is found that the pitch between the segmented n
⁺⁺
regions is critical to the short circuit current (J
_sc
) of the cell. An increase of 0.4 mA/cm
²
is seen in the J
_sc
when the pitch is increased from 50 μm to 200 μm while maintaining the fill factor of 79%.