Simulation Studies of Tunnel Field Effect Transistor (TFET)

TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied. Synopsis® device simulation tool MEDICI® is used to analyze the device performance. According to simulation results, the threshold voltage of n-type TFET and p-type TFET was initially obtained as 1.5V and -2V respectively using constant current method. Then using transconductance change method, two threshold voltages V
_TG
and V
_TD
were extracted from I
_DS
-V
_GS
and I
_DS
-V
_DS
graphs respectively. An excellent ON/OFF performance was also observed in simulation results.