Material potential and scalability challenges of germanium CMOS

This paper overviews the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO
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/Ge gate stacks and device physics of inversion layer mobility, and then discusses future prospects and fundamental challenges for further miniaturization from the viewpoint of Ge/high-k gate stacks and ET-GeOI MOSFETs.