Piezoelectric characterization of Pb(Zr,Ti)O/sub 3/ thin films by interferometric technique

In this paper different aspects of piezoelectric characterization of ferroelectric thin films are discussed. An experimental technique based on a double-beam laser interferometer is described which allows the study of small electric field induced displacements in thin films. The interferometric technique is successfully applied for the evaluation of the piezoelectric properties of ferroelectric thin films. Examples of piezoelectric behavior are given for sol-gel Pb(Zr,Ti)O/sub 3/ films of compositions and thicknesses. Are linked to the poling conditions and to the orientation of the grains. The of domain wall motion to the piezoelectric response in oriented PZT films is discussed.