Gamma irradiation effects on resistance of surface micromachined polycrystalline silicon beams in MEMS

This paper reports gamma irradiation effects on the resistance of polycrystalline silicon beams in MEMS. Co60 irradiation test was performed to reveal mechanisms underlying radiation effects. Changes of the resistances have been measured by Semiconductor Characterization Instruments. The mechanisms of gamma irradiation effects on the resistance of polycrystalline silicon were discussed in detail. Resonant frequencies were measured by Laser Doppler Vibrometer (LDV) to validate the mechanism of gamma irradiation effect on resistance.