LPCVD process simulation based on Monte Carlo method

Mechanisms during low pressure deposition (LPCVD) process in Micro-Electro-Mechanical Systems (MEMS) and Integrated Circuits (IC) fabrication have been analyzed. The LPCVD process has then been successfully simulated based on the re-emission models with Monte Carlo method and the Lagrangian method (shorthand denoted as L-type method) for boundary movement simulation. Simulation results show an agreement with the available experimental results. This is useful for the research of LPCVD process and the development of MEMS and IC design.