Highly Stable Radiation-Hardened Resistive-Switching Memory

In this letter, the resistive random access memory (RRAM) with metal–insulator–metal structure is investigated for the first time under radiation conditions. The fabricated Cu-doped
$\hbox{HfO}_{2}$
-based RRAM devices are found to have immunity from
$^{60}\hbox{Co}\ \gamma$
ray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after
$^{60}\hbox{Co}\ \gamma$
ray treatment with a total dose as high as
$\hbox{3.6} \times \hbox{10}^{5}\ \hbox{rad}$
(Si). Furthermore, a retention characteristic of
$\hbox{10}^{5}$
s is also achieved during radiation. The highly stable characteristics of Cu-doped
$\hbox{HfO}_{2}$
-based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.