Sub-micron InGaAs Esaki diodes with record high peak current density

In conclusion, the authors have reported the highest current density ever achieved for a tunnel junction with a J
_ρ
of 975 kA/cm2. Furthermore, reducing the p-type doping in TD1 by half (TD2) reduced J
_ρ
by 78.5% and doubled the PVCR. These results may be used to calibrate band-to-band tunneling models. The fabrication of sub-micron devices, enabled by E-beam lithography and BCB as an ILD, was key to limiting output current and series resistance. Finally, specific resistivities have been extracted which may be used to compare the use of tunnel junctions as contacts; applications include source/drain regrowth and multi-junction solar cells.