CMOS low-noise switched charge sensitive preamplifier for CdTe and CdZnTe X-ray detectors

CdTe and CdZnTe X-ray detector arrays for imaging and spectroscopy provide low capacitance current sources with low leakage currents. The optimal shaping time for low-noise operation is relatively high in CMOS analog channels that provide the readout for these detectors. The shaper is centered at lower frequencies, and thus the 1/f noise from the electronics is the main noise source that limits the resolution of the channel. The optimal dimensions of the input stage MOSFET are determined by this noise. In this paper a design criterion for the optimization of the resolution and the power consumption in a 1/f noise dominated readout is introduced. A readout based on CMOS switched charge sensitive preamplifier without feedback resistor has been designed and fabricated in the CMOS 2-/spl mu/ low-noise analog process provided by MOSIS. This design provides high sensitivity and the possibility to integrate a large number of channels with low power consumption. Measurements of the performance of a first prototype chip are presented.