Switching characteristics of SiC-VJFET and manufacture of inverter

The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles. When super high-speed switching devises such as SiC-VJFET are operated in a power converter, their high dv/dt rate in the rise time and the fall time causes a high-frequency common-mode current. It is necessary to evaluate the EMI by high-speed switching devises such as SiC-VJFET for designing a 3 phase inverter with SiC-VJFET. This paper describes switching characteristics such as rise time, fall time and switching loss of SiC-VJFET. We also report manufacture of inverter using SiC-VJFET devices and an electric vehicle installing ac servo-motor driven by the SiC-VJFET inverter.