First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy

The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the I/sub th/ of 260 mA, the J/sub th/ of 5.4 kA/cm/sup 2/ and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K. The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.