Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of
L
_EFF
/λ, where
L
_EFF
is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that
L
_EFF
of undoped GAA NW MOSFETs can be scaled down by ~2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.