RF compact small-signal model for SOI DG-MOSFETs

A compact model for small-signal equivalent circuit of DG-MOSFETs is presented. The intrinsic parameters are obtained from DC analytic compact model. This DC model allows determining the mobile charge inside the transistor channel, from which the intrinsic parameters are derived. Additionally, the extrinsic capacitances are calculated and included into the model. This compact small-signal model allows determining the transistor RF behavior at different bias conditions and for different technological parameters in a more simple and precise way.