Characterization of a new 4.5 kV press pack SPT+ IGBT in Voltage Source Converters with clamp circuit

Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized for an operation in Voltage Source Converters. To reduce the IGBT turn-on losses compared to hard switching the clamp circuit configuration of IGCTs was adapted to the operation of press pack IGBTs. The switching behavior of IGBT and diode are characterized for varying dc-link voltages, load currents, junction temperatures and clamp inductances.