Effect of material composition, device length and applied voltage on resonant tunneling in an asymmetrical double-barrier hetero-structure

Transmission coefficient of electrons in an asymmetrical double-barrier hetero-structure has been calculated for different barrier widths, well widths, barrier-material compositions and applied voltages. These calculations are done using transmission line analogy of resonance tunneling phenomena and the results are used to show the effects of these variable parameters on transmission coefficient in terms of change in resonance energies.