Millimeter-wave high-Q CMOS active inductor

This paper presents a novel low-power high-Q active inductor, which exploits only an integrated transformer and a MOSFET in common drain configuration. The operating principle is explained and the equivalent input impedance is derived. The case study for millimeter-waves low-power applications has been implemented by using a standard 90-nm CMOS process. The active inductor provides an equivalent inductance close to 1.3 nH with an associated quality factor (Q) close to 250 at 34.6 GHz, with a power consumption of 354 ¿W and 500-mV supply voltage.