Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

Channel hot-carrier degradation presents a renewed interest in the last NMOS nodes where the device reliability of bulk silicon (core) 40 nm and Input/Output (IO) device is difficult to achieve at high temperature as a function of supply voltage VDD and back bias V
_BS
. A three mode interface trap generation is proposed based on the energy acquisition involved in distinct interactions in all the V
_GS
, V
_DS
(V
_BS
) conditions as a single I
_DS
lifetime dependence is observed with V
_GD
> 0. This gives a new age(t) function useful for accurate DC to AC transfers. Positive temperature activation is explained by the rise of ionization rate with electron-electron scattering (medium I
_DS
) and multi vibrational excitation (higher I
_DS
) which increase the H desorption by thermal emission. The use of forward VBS has shown no gain under CHC for both device types. The main limitation occurs under reverse V
_BS
= -V
_DD
in IO where the smaller temperature activation partially compensates the larger damage. In that case a security margin can be established giving a limit of V
_BS
= -V
_DD
/2 for design reliability.