Factors impacting stabilization of tetragonal phase in HfxZr1−xO2 high-k dielectrics

One method to further scale hafnium based dielectrics is to stabilize the tetragonal phase of HfO
₂
via zirconium addition. In this paper we investigated factors impacting stabilization of tetragonal phase in thin Hf
_x
Zr
_1-x
O
₂
high-k dielectrics such as deposition technique, precursor combination, annealing ambient and the use of capping layers.