Modeling PIN diodes for high power RF and microwave applications

A detailed numerical model that integrates DC forward current, emitter recombination and I-region width and radius for simulation of PIN diodes used at high power levels is presented. Details on the model are provided so that easy implementation by the reader may be performed. It is shown that for certain PIN diode geometries, the analytic methods can underestimate the surface recombination current and overestimate the overall I-region charge density. The model is verified with experimental data showing the deviations from ideal 1/I
_DC
at high current injection.