GaN X-band 43% internally-matched FET with 60W output power

An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8 dBm (60.3 W) have been achieved with the developed GaN internally-matched FET.