InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD

The design and operation of strained-layer InGaAs-GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by selective-area epitaxy are presented. Devices with modulator lengths of 290, 620, and 1020 μm have cw threshold currents of 9, 7.5, and 7.5 mA, respectively, at a modulator bias of 0 V. These devices also exhibit extinction ratios of 16.5, 19.5, and 20.5 dB, respectively, at a modulator bias of 2 V.