Characterization of Power Insulated-Gate Bipolar Transistors to Create a SPICE Model for Pulsed Power Applications

Power insulated gate bipolar transistors (IGBTs) are frequently used in pulsed power applications. While published data is readily available for most IGBTs under steady-state conditions, little information is known for a given IGBT regarding pulsed power conditions. This paper presents a characterization process of power IGBTs for creating IGBT SPICE models. Each IGBT will be subjected to single 5 mus pulses at 4.5 kV and 1 kA. During the pulse, characteristics such as rise time, fall time, maximum collector current, and maximum collector-emitter voltage will be measured. Additionally, the effects of the gate drive with respect to the collector-emitter characteristics will be observed. This process will be demonstrated with the IXYS IXEL40N400 and the Powerex QIS4506001 IGBTs to allow for circuit simulations with these models as circuit elements.