16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver

A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized. The p-i-n photodiode is implemented using the InGaAs base and collector layers of the HBT. A three-stage amplifier with a feedback resistance of 550 /spl Omega/ demonstrated a transimpedance gain of 46 dB/spl Omega/ and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz/spl Omega/. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.<
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