Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 $\hbox{m}\Omega \cdot \hbox{cm}^{2}$. These values correspond to the world record of 11.3 $\hbox{GW}/\hbox{cm}^{2}$ for Baliga's figure-of-merit $(\hbox{BFOM} = \hbox{4}V_{\rm bd}^{2}/R_{{\rm on} \hbox{-}{\rm sp}})$.