High-Performance 1.3 μm Dilute-Nitride Edge-Emitting Lasers

The paper presents record performances achieved by dilute-nitride edge-emitting lasers developed in the EU-FP6 project FAST ACCESS. Some of the dilute-nitride material particularities together with epitaxial growth, post-growth treatment and laser structure issues are discussed. Record threshold current, slope efficiency, characteristic temperature, small- and large-signal modulation are presented, proving that the dilute-nitride GalnAsN lasers are a solution for low-cost un-cooled transmitters targeting the metropolitan and access area networks.