Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation

AlGaAs/GaAs high electron mobility transistors (HEMTs) have been exposed to 90 Mrad(GaAs) of Co60 gamma radiation. Despite the heavy exposure, the peak transconductance for selected transistors was only diminished by approximately 4%. In addition, threshold voltage shifts of up to 80 mV were observed for both enhancement and depletion mode devices.