A Comprehensive Model for Predicting Semiconductor Detector Performance

A Monte-Carlo computational model has been developed to simulate the photon and electron spectral response in semiconductor detectors. Source photons from 10 eV to 1 GeV are three-dimensionally absorbed in detectors of almost arbitrary shape. One-dimensional charge collection in an arbitrary electric field profile includes trapping and electronics system effects. HgI2, CdTe, and Ge spectra, as well as full energy peak and absorption efficiency calculations, are made into the MeV range.