Semiconductor Counters with Thin Window n+ and p+ - Contacts Produced by Ion-Implantation

Ion-implantation techniques were used to produce n+ and p+-contacts on n and p-type germanium, n and p-type silicon and lithium compensated germanium. Interstitial and substitutional doping behaviour of 33 elements were investigated. Only with few ions it is possible to get non-injecting contacts with good reverse characteristics using low temperature annealing process. Results on the application of those contacts to radiation detection are given.