Theoretical study of the quantum efficiency of InGaAs/GaAs resonant cavity enhanced photodetectors

We present a theoretical analysis on the quantum efficiency of a resonant cavity InGaAs/GaAs p-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and a energy conservation law is offered. Using anomalous dispersion (AD) mirror as the top mirror flat-topped QE spectrum has been obtained. Conditions for ideal flat-topped the spectral response have been received. We present a design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak.