3D Quantum Numerical Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs

The impact of quantum confinement effects on the transient response of 32 nm multiple-gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of double-gate, triple-gate, omega-gate and gate-all-around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 nm thick silicon channel are then analyzed.