Role of Doping and Thickness of Emitter in the Efficiency of Monocrystalline Si Solar Cells

In order to improve the efficiency of Czocharalski - Si (Cz-Si) photovoltaic cells, we have studied the distribution losses from recombination in Cz-Si commercial standard cell (Isofoton S.A.) by means of I-V measurements under solar simulation illumination with a surface irradiance of 1000 W/m
²
and a light spectrum corresponding to a relative air mass of 1.5 G and the PC-1D software. The quantum efficiency of these cells was also measured. An important ratio of losses is localized in the emitters with a low resistance (40 Ω/ ). To decrease the Auger recombination in these emitters we have changed the phosphorous diffusion condition in the furnace in order to obtain shallower and low doping emitters (80 Ω/ ). A new paste for fingers and a metallization procedure were also developing. These new cells present an improvement in its efficiency of 3.5%.