High Power Density Converter using SiC-SBD

This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.