Low Voltage High-Performance Class-AB FGMOS Buffer

A new high speed low voltage class-AB CMOS buffer is proposed in this paper. Embedded with the proposed low voltage error amplifier comprising only CMOS inverters and floating-gate MOSFETs, the well known complementary class-AB CMOS buffer is successfully designed and operated with 1.5V power supply and the unity gain bandwidth of 29MHz. The output stage delivers maximum output sinusoidal voltage swing of plusmn0.6V into a resistive load of 100 Ohms. The buffer exhibits -55dB THD for 100 kHz and plusmn0.5V output voltage swing with less than 1% output voltage error on a 0.5mum CMOS process. Simulation results on rectangular wave responses show the system stability and confirm the maximum output capacitive load of 60pF with 1V signal swing and 9.4 V/muS slew rate