The high-frequency analogue performance of MOSFETs

The high-frequency (HF) behaviour of MOSFETs from different CMOS processes has been characterised. Small-signal Y-parameters and derived quantities such as current, voltage and power gain have been measured and good agreement with calculations using the Philips compact model, MOS MODEL 9, has been obtained. Using HF measurements on MOSFETs and bipolar devices, it is shown that the figures of merit, related to the gains mentioned above, are not sufficient to evaluate the HF capabilities of CMOS, BiCMOS and bipolar technologies.<
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