Development of large area p-Si surface barrier detectors and the associated charge sensitive preamplifier

Large-area Si surface barrier detectors (SDB), with 95 cm/sup 2/ sensitive area and a charge-sensitive preamplifier, for use up to 10/sup 5/-pF input capacitance were developed. The noise width of the preamplifier had a slope of 7 eV/pF with respect to the input capacitance. The p-Si detectors were made of MCZ Si of 1.7-3.6-k Omega resistivity Si grown in an intense transverse magnetic field. The detector characteristics and the fabrication technique, including the surface treatment and passivation, are described in detail.<
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