Two-dimensional, static and dynamic device simulation of laser diodes

A two-dimensional device simulator for laser diodes is introduced, and its capability for quantitative device design of InGaAsP lasers is shown. This static and dynamic device simulator is based on the self-consistent analysis of five basic equations (Poisson's equation, current continuity equations for electrons and holes, the wave equation, and the rate equation for photons). The simulator has been applied to the optimum design of simplified buried-heterostructure (BH) lasers. The simulator has made it possible to optimize device structure with respect to several requirements, such as low threshold current, low leakage current, fundamental transverse lasing mode, and high-frequency modulation capability.<
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