High transconductance 0.1 mu m pMOSFET

Very high transconductance 0.1 mu m surface-channel pMOSFET devices are fabricated with p/sup +/-poly gate on 35 AA-thick gate oxide. A 600AA-deep p/sup +/ source-drain extension is used with self-aligned TiSi/sub 2/ to achieve low device series resistance. The maximum saturation transconductances, 400 mS/mm at 300K and 500 mS/mm at 80K, are the highest reported to date for pMOSFET devices.<
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