Compositional control of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films by reactive sputtering and MOCVD

The preparation and compositional control of Pb(Zr,Ti)O/sub 3/ films obtained using two kinds of reactive sputtering processes and MOCVD (metal-organic chemical vapor deposition) were investigated. When a metal composite target was used in reactive sputtering, the film composition Zr/(Zr+Ti) could be controlled from 0.25 to 0.81 by changing the total area of Ti in the target. When an alloy target was used in reactive sputtering, there was no change in the Zr/(Zr+Ti) ratio of the films up to 196 h of target usage, and the reproducibility of the film compositional control was very good. Using the MOCVD method, the composition of the films and crystalline structures could be easily controlled by changing the amounts of gases supplied.<
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