Resistivity variations in ion implanted silicon detectors

Some ion implanted Si detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations, depletion depth studies are performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.<
>