Evaluation of the influence of convective energy in HBTs using a fully hydrodynamic model

A 1-D, parabolic-band, full-hydrodynamic model is developed and applied to the simulation of heterojunction bipolar transistors (HBTs). A unique feature of this approach is the ability to continuously vary numerical, physical, and structural parameters while achieving a completely self-consistent solution at any condition. Using continuation in conjunction with critical terms in the model, one is able to analyze and compare the predictions of a compatible set of hierarchical (drift-diffusion to energy balance to hydrodynamic) models. As a result, this analysis should enable the development of computationally efficient models with suitable accuracy for design and optimization of high-performance devices.<
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