Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

The distribution of the A-center (oxygen vacancy) in neutron-damaged silicon detectors was studied using deep level transient spectroscopy. A-centers were found to be nearly uniformly distributed in the silicon wafer depth for medium-resistivity (0.1-0.2-k Omega -cm) silicon detectors and high-resistivity (>4-k Omega -cm) high-temperature (1200 degrees C) oxidized detectors. A positive filling pulse was needed to detect the A-centers in high-resistivity silicon detectors, and this effect was found to be dependent on the oxidation temperature. The A-center was not observed in a sample from a high-temperature oxidation with TCA having a very high carbon content.<
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