Microwave InAlAs/InGaAs/InP HEMTs: status and applications

The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<
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