Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

For the first time, scaled PMOS MUGFET devices with TiCN/HfO
₂
gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 μA/μm @ I
_off
20nA/μm, at V
_ds
= -1.2V) is achieved with extensions formed by optimized PLAD process