Determination of Internal Loss and Quasi-Fermi Level Separation From the Amplified Spontaneous Emission Spectrum of Fabry–PÉrot Semiconductor Lasers | IEEE Journals & Magazine | IEEE Xplore

Determination of Internal Loss and Quasi-Fermi Level Separation From the Amplified Spontaneous Emission Spectrum of Fabry–PÉrot Semiconductor Lasers


Abstract:

The net modal gain and the un-amplified spontaneous emission (ASE) coupled into the laser waveguide mode are extracted from the ASE spectrum of Fabry-Perot semiconductor ...Show More

Abstract:

The net modal gain and the un-amplified spontaneous emission (ASE) coupled into the laser waveguide mode are extracted from the ASE spectrum of Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process. Highly accurate quasi-Fermi level separation and internal loss are then derived by a minimum search process from the relationship between the spontaneous emission and gain
Published in: IEEE Photonics Technology Letters ( Volume: 18, Issue: 18, September 2006)
Page(s): 1910 - 1912
Date of Publication: 23 October 2006

ISSN Information:

Citations are not available for this document.

I. Introduction

At present, the Fourier transform (FT) method has been successfully applied to extract net modal gain from the amplified spontaneous emission (ASE) spectrum of Fabry–Pérot (FP) semiconductor lasers [1]. Further work using this method to measure the linewidth enhancement factor was also carried out [2]. Compared with the well-known Hakki–Paoli method [3], the resolution bandwidth influence on the FT method can be alleviated by a deconvolution process [4]. In this letter, we extend the functionality of the FT method to extract both quasi-Fermi level separation and internal loss from the ASE spectrum. The internal loss and quasi-Fermi level separation can be derived from the relationship between the spontaneous emission and gain [5], [6]. This requires the unamplified spontaneous emission to be measured, for example, from the side of the FP laser [5], which is quite difficult in practice. The emission from the end facet of the FP laser is easy to measure but is intrinsically modulated by the FP cavity. This modulation can be easily decomposed by the FT method, which transforms the quasi-periodic spectrum into a series of separated peaks corresponding to harmonics of the optical round-trip of the cavity [1], [4], [7]. The round-trip gain can be derived from the ratio of the inverse Fourier transformed zeroth and first peaks [1], [4]. As described below, the zeroth harmonic also contains the spontaneous emission information [6] which, however, is omitted in the standard FT method. In this letter, we use a minimum search process to extract the internal loss and quasi-Fermi level separation from the spontaneous emission and the net modal gain spectrum, both of which are obtained from the FT method. The gain extraction always needs a high resolution bandwidth, otherwise the underestimation of the gain will have a negative influence on the accuracy of the extracted internal loss and quasi-Fermi level separation. We also show that by using a deconvolution process, the gain underestimation can be reduced [4] so that the requirement for high resolution bandwidth can be eased.

Cites in Papers - |

Cites in Papers - IEEE (3)

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1.
Wei-Hua Guo, Diarmuid C. Byrne, Qiaoyin Lu, Brian Corbett, John F. Donegan, "The full characterization of Fabry-Pérot lasers using the Fourier series expansion method", 2011 13th International Conference on Transparent Optical Networks, pp.1-6, 2011.
2.
Wei-Hua Guo, Diarmuid C. Byrne, Qiaoyin Lu, Brian Corbett, John F. Donegan, "Fabry–Pérot Laser Characterization Based on the Amplified Spontaneous Emission Spectrum and the Fourier Series Expansion Method", IEEE Journal of Selected Topics in Quantum Electronics, vol.17, no.5, pp.1356-1363, 2011.
3.
D. Byrne, W. H. Guo, R. Phelan, Q. Y Lu, J. F. Donegan, B. Corbett, "Measurement of the Linewidth Enhancement Factor of InGaAlAs and InGaAsP laser diodes using the Fourier Series Expansion of the Amplified Spontaneous Emission spectrum", 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, pp.1-1, 2007.

Cites in Papers - Other Publishers (10)

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Peter P. Vasil'ev, Richard V. Penty, "Quantum degeneracy and phase-space density in superradiant semiconductor heterostructures at room temperature", EPL (Europhysics Letters), vol.133, no.3, pp.37004, 2021.
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3.
Peng Zhang, Teli Dai, Yiping Liang, Siqiang Fan, Yanrong Song, Xinping Zhang, "Spectral characteristics of amplified spontaneous emission in a semiconductor disc laser", Journal of Physics D: Applied Physics, vol.45, no.23, pp.235103, 2012.
4.
Y. Huang, D. J. Chen, H. Lu, K. X. Dong, R. Zhang, Y. D. Zheng, L. Li, Z. H. Li, "Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes", Applied Physics Letters, vol.101, no.25, pp.253516, 2012.
5.
D.C. Byrne, W.H. Guo, Q.Y. Lu, B. Corbett, J.F. Donegan, "Technique to calculate geometric spontaneous emission factor from amplified spontaneous emission spectrum of FP semiconductor laser", Electronics Letters, vol.46, no.14, pp.1017-1019, 2010.
6.
Akin Akturk, Neil Goldsman, Siddharth Potbhare, Aivars Lelis, "High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation", Journal of Applied Physics, vol.105, no.3, pp.033703, 2009.
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Yun Zhang, Dongwon Yoo, Jae-Boum Limb, Jae-Hyun Ryou, Russell D. Dupuis, Shyh-Chiang Shen, "GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates", physica status solidi (c), vol.5, no.6, pp.2290, 2008.
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Gang Chen, Feras Abou-Galala, Zhengyuan Xu, Brian M. Sadler, "Experimental evaluation of LED-based solar blind NLOS communication links", Optics Express, vol.16, no.19, pp.15059, 2008.
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Elías Muñoz, "(Al,In,Ga)N-based photodetectors. Some materials issues", physica status solidi (b), vol.244, no.8, pp.2859, 2007.
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J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, K. Evans, "GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition", Applied Physics Letters, vol.89, no.1, 2006.
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