High-Quality$hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$MIM Capacitors for RF Applications

The electrical characteristics of layered Al
₂
O
₃
/Pr
₂
O
₃
/Al
₂
O
₃
metal-insulator-metal (MIM) capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4-nm Al
₂
O
₃
/8-nm Pr
₂
O
₃
/4-nm Al
₂
O
₃
shows a high capacitance density of 5.7 fF/mum
²
, a low leakage current density of 5times10
^-9
A/cm
²
at 1 V, and an excellent dielectric loss behavior over the studied frequency range