Comparison of the scaling characteristics of nanoscale silicon N-channel multiple-gate MOSFETs

This paper compares the scaling characteristics of the three leading multi-gate MOSFET designs, namely the finFET, trigate and omega-gate. A commercial numerical device simulator is employed using a common set of material parameters, device physics models and performance metrics. Examined initially are the short channel effects including the subthreshold slope S and drain induced barrier lowering DIBL as the gate length is scaled down to 20 nm. Subsequently investigated and compared are the effects of scaling of the fin body's width and height, the oxide thickness and the channel doping. The results suggest that the omega-gate MOSFET shows the best device scaling characteristics