I. Introduction
In the time-domain modeling techniques such as the finite-difference time-domain method [1], a lump electronic device, such as a transistor, is often treated as a black box represented by its time-domain network parameters [2] [3]. The parameters of most electronic devices are, however, often given in frequency domain and in a limited frequency range. Therefore, they need to be transformed into the corresponding time-domain parameters for inclusion in time domain modeling.