0.8 µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor

A submicron Bi-CMOS technology with direct ion-implanted emitter bipolar transistor has been developed. The process base is the 0.8µm CMOS process. For the bipolar transistor, an ion-implanted emitter structure was chosen to minimize the production cost. By optimizing the bipolar transistor, a sufficiently high performance for Bi-CMOS gates has been obtained. The direct ion-implanted emitter Bi-CMOS process would be popular to attain high speed submicron VLSIs, due to good mass-productivity and sufficiently high performance.