Technology requirements for mega bit CMOS EPROMs

New technologies inherent to EPROM structure have been developed and discussed for realizing mega bit CMOS EPROMs. We have introduced three key technologies: (i) DI
²
DSA structure for high speed write/read characteristics, (ii) oxide film by argon diluted oxygen oxidation and/or polyoxide/nitride/oxide structures for thin reliable 2nd gate insulator, (iii) masked LDD structure for hot carrier resistance and high breakdown voltage. These technologies are considered to be promising for future advanced EPROMs.