Deep UV 1:1 projection lithography utilizing negative resist MRS

A negative deep UV resist Micro Resist for Shorter wavelengths (MRS) is successfully applied to 1:1 projection printing. The MRS is characterized by strong absorption of deep UV light and absence of swelling in the developer. It resolves steep profile images of 1-µm linewidth in 1-µm-thick films. The resist has extremely high sensitivity to deep UV light. Scanning exposure time necessary for a 4-in wafer is about 25 s. The MRS exhibits dry etching resistance superior to that of an AZ-type positive resist. Furthermore, MRS is not adversely affected by reflected light from stepped aluminum surfaces. Application of MRS should open the way to realization of a practical deep UV 1:1 projection lithography featuring high resolution and throughput.